TranSiC

TranSiC, founded in 2005 and headquartered in Stockholm, Sweden, develops bipolar power transistors using silicon carbide (SiC) technology. These components are engineered for power control in demanding, high-temperature environments, capable of operating at temperatures up to 250°C. The company's products, such as the BitSiC1206 and BitSiC0620 transistors, are designed as alternatives to traditional silicon-based Insulated Gate Bipolar Transistors (Si-IGBTs).

TranSiC's technology offers significant advantages, including higher efficiency and the ability to handle high junction temperatures, which is critical for applications in the avionics and oil and gas industries. The transistors are also suitable for use in hybrid electric vehicles, photovoltaic inverters, power factor correctors, and motor drives. The use of silicon carbide allows for very low on-state power losses—potentially a 60% reduction compared to silicon IGBT technology—and fast switching capabilities. The firm's target market includes designers and manufacturers who require components that provide low power losses, high switching frequencies, and high maximum junction temperatures. TranSiC was acquired by Fairchild Semiconductor International.

Keywords: silicon carbide, power transistors, bipolar junction transistor, SiC, harsh environments, high temperature electronics, power control, semiconductor, power electronics, motor drives, photovoltaic inverters, avionics, hybrid vehicles, power components, switching power transistor, wide bandgap, power semiconductor, Fairchild Semiconductor