
Nitride Solutions
Nitride Solutions | Aluminum Nitride Substrates | Wichita, Kansas.
Date | Investors | Amount | Round |
---|---|---|---|
- | investor investor | €0.0 | round |
investor | €0.0 | round | |
N/A | €0.0 | round | |
investor investor investor | €0.0 | round | |
N/A | €0.0 | round | |
$2.8m | Early VC | ||
Total Funding | 000k |
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Nitride Global, Inc., formerly known as Nitride Solutions, is an advanced materials manufacturer founded in 2009 and headquartered in Wichita, Kansas. The company was established by Jason Schmitt and Jeremy Jones, with its origins tracing back to Kansas Semiconductor, which was started by Schmitt. His background includes undergraduate research in aluminum nitride crystal growth at Kansas State University. The company has secured significant private investment over the years, including a $2.5 million Series A round, a $3 million round in 2015, and a $2.75 million round in 2017 to expand production capacity.
Nitride Global operates in the semiconductor and microelectronics industries, specializing in the development and high-volume production of Aluminum Nitride (AlN) and its derivative materials. The company's business model is centered on manufacturing and supplying these advanced materials to a global client base, including electronics manufacturers in the US and Asia. Its customers are typically involved in producing high-power, high-frequency, and high-temperature electronic devices for commercial and defense applications. The company highlights its position as the only North American-owned entity in the bulk AlN market, addressing supply chain security for critical technologies.
The core of Nitride Global's product portfolio is its ultra-high-purity polycrystalline Aluminum Nitride. This material is crucial for manufacturing substrates used in UVC LEDs, power electronics, and high-speed communication chips. AlN substrates are noted for their exceptional thermal conductivity and high electrical resistance, which allows electronic devices to dissipate heat effectively and operate at higher power without failing. This enables advancements in applications like water and air purification, high-voltage power switches, and components for electric vehicles. A key offering is the AT-50 aluminum nitride template, which provides a lower-cost alternative to bulk AlN substrates.
Another significant product is a proprietary Aluminum Oxynitride (AlON) thermal coating solution. Developed as a thermal management, dielectric, and passivation coating, AlON represents a breakthrough in advanced packaging for power electronics and 3D packaging. This technology, which partners with a high-speed sputtering deposition process from Fraunhofer FEP, offers superior heat dissipation to increase device reliability and lifespan. The company's solutions cater to a multi-billion dollar addressable market and are protected by an extensive IP portfolio. Recently, Nitride Global was selected for the prestigious Plug and Play Semiconductor Accelerator Program, which will provide resources to scale its technologies across the semiconductor, aerospace, datacenter, and EV sectors.
Keywords: Aluminum Nitride, AlN substrates, Aluminum Oxynitride, AlON coating, advanced materials, semiconductor manufacturing, microelectronics, UVC LED, thermal management, power electronics, ultrawide bandgap, high-purity polycrystalline AlN, substrate technology, dielectric coating, passivation coating, high-voltage electronics, advanced packaging, semiconductor materials, Jeremy Jones, Jason Schmitt