JT Microelectronics
Focuses on the application of wide bandgap semiconductor gallium nitride power devices and drivers in the field of power electronics.
| Date | Investors | Amount | Round |
|---|---|---|---|
| investor | €0.0 | round | |
| investor | €0.0 | round | |
| investor | €0.0 | round | |
* | CNY60.0m | Seed | |
| Total Funding | 000k | ||
Related Content
JT Microelectronics, established in December 2020 in Shenzhen, is a semiconductor company specializing in Gallium Nitride (GaN) technology. The company was founded by a team with backgrounds from ETH Zurich and the Swiss PI R&D, including Dan Liu, who serves as the CEO. The founding team has extensive experience in the semiconductor industry, with core members having previously worked at leading companies such as Infineon, STMicroelectronics, PI, and Cree.
The company focuses on the design, development, and sales of GaN-based products, including power drive chips, power switches, and Schottky diodes. These components are designed for use in a variety of power electronics applications. The business model revolves around providing these high-performance semiconductor solutions to a client base that requires efficient power management in their electronic devices. The company was initially financed by the Shenzhen Angel Fund and has since secured further investment to support its growth and research and development efforts.
Keywords: Gallium Nitride, GaN, semiconductors, power electronics, power devices, drive chips, power switches, Schottky diodes, integrated circuits, power management