Garen Semiconductor
Gallium oxide semiconductor substrate materials developer.
| Date | Investors | Amount | Round |
|---|---|---|---|
| investor investor | €0.0 | round | |
* | CNY100m | Seed | |
| Total Funding | 000k | ||
Hangzhou Garen Semiconductor Co., Ltd. is a high-tech enterprise founded in September 2022 that specializes in the research, development, production, and sale of wide bandgap semiconductor materials, particularly gallium oxide (Ga2O3). The company has strong ties to Zhejiang University, leveraging the State Key Laboratory of Silicon and Advanced Semiconductor Materials and the ZJU-Hangzhou Global Scientific and Technological Innovation Center. Its research and development team was established in 2018 under the guidance of academician Yang Deren.
Garen Semiconductor has pioneered new technologies for gallium oxide single crystal growth, such as a self-developed casting method, which has allowed for significant breakthroughs. The company has achieved notable milestones, including the production of 6-inch and the world's first 8-inch gallium oxide single crystal substrates. This rapid progression saw them advance from 2-inch to 8-inch wafers in a few years, setting a new industry pace. The company's products include gallium oxide polished wafers of varying sizes, crystal orientations, and resistivities, as well as customizable gallium oxide seeds. These products are critical for power electronic devices used in sectors such as the national grid, new energy vehicles, rail transit, and 5G communications.
The company's business model is focused on providing high-quality gallium oxide substrate products with completely independent intellectual property rights, holding over a dozen international and domestic invention patents. This strategy aims to reduce reliance on international suppliers in the domestic Chinese market. In August 2024, Garen Semiconductor secured a Pre-A round of financing led by Jiuzhi Capital, with participation from Puhua Capital and existing angel investors like Lanchi Venture Capital.
Keywords: gallium oxide, Ga2O3, wide bandgap semiconductor, single crystal substrate, power electronics, semiconductor materials, casting method, wafer manufacturing, new energy vehicles, 5G communications, crystal growth, semiconductor substrates, advanced materials, power devices, domestic semiconductors