EpiGaN

EpiGaN, now operating as Soitec Belgium N.V., specializes in the manufacturing of Gallium Nitride (GaN) epitaxial wafers. The company was founded in 2010 as a spin-off from the Belgian micro- and nano-electronics research center, imec, by Dr. Marianne Germain, Dr. Joff Derluyn, and Dr. Stefan Degroote. The founders leveraged over a decade of joint research in GaN-on-Silicon (GaN-on-Si) technology to establish the company.

The firm's core business involves producing GaN-on-Si and GaN-on-Silicon-Carbide (GaN-on-SiC) epi-wafers which are critical components for high-performance semiconductor devices. These wafers enable the creation of power electronics and radio frequency (RF) devices with higher power efficiency, reduced energy loss, and the ability to switch at higher frequencies, leading to smaller and lighter systems. EpiGaN's products cater to integrated device manufacturers in markets such as 5G infrastructure, power electronics for consumer and industrial applications, automotive systems, and sensors. A key technological feature is its proprietary in-situ silicon nitride (SiN) passivation layer, which enhances device reliability and performance.

In May 2019, EpiGaN was acquired by Soitec, a French leader in designing and manufacturing innovative semiconductor materials, for €30 million in cash plus potential milestone-based payments. The acquisition was a strategic move for Soitec to expand its product portfolio beyond silicon into the growing GaN market for 5G RF and power systems. Following the acquisition, EpiGaN was integrated as a business unit and, in June 2020, was renamed Soitec Belgium N.V., fully adopting Soitec's corporate identity.

Keywords: Gallium Nitride, GaN-on-Si, epi-wafers, semiconductors, RF devices, power electronics, epitaxial wafers, 5G infrastructure, GaN-on-SiC, silicon carbide